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BTD1768A3 - NPN Epitaxial Planar Transistor

General Description

The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Key Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=80V (min. ).
  • High collector current, IC(max)=1A (DC).
  • Pb-free lead plating and halogen-free package Symbol BTD1768A3 Outline TO-92 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD1768A3-X-TB-G BTD1768A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 b.

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Datasheet Details

Part number BTD1768A3
Manufacturer Cystech Electonics
File Size 267.93 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1768A3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2017.05.16 Page No. : 1/6 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.