BTD1758J3 - NPN Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Part number	BTD1758J3
Manufacturer	Cystech Electonics
File Size	142.20 KB
Description	NPN Epitaxial Planar Transistor
Datasheet	BTD1758J3 Datasheet
Additional preview pages of the BTD1758J3 datasheet.

Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A.
Excellent current gain characteristics.
Complementary to BTB1182J3 Symbol BTD1758J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol.

📁 Similar Datasheet

Other Datasheets by Cystech Electonics

Published: May 11, 2007 |