Datasheet Details
| Part number | BTD1758J3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 142.20 KB |
| Description | NPN Epitaxial Planar Transistor |
| Datasheet |
 BTD1758J3 Datasheet
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Key Features
- Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A.
- Excellent current gain characteristics.
- Complementary to BTB1182J3 Symbol BTD1758J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol.