BTD1758J3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. 2003.05.25 Revised Date.
BTD1758J3 Key Features
- Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
- Excellent current gain characteristics
- plementary to BTB1182J3