BTD965A3 Description
CYStech Electronics Corp. 2003.04.01 Revised Date :2011.02.14 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965A3 BVCEO IC RCESAT(typ) 20V 5A 0.12Ω.
BTD965A3 Key Features
- Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
- Excellent DC current gain characteristics
- plementary to BTB1386A3
- Pb-free package