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MTB025C04H8 - N- AND P-Channel Enhancement Mode MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 40V 7.3A 21A 18.3mΩ 26.6mΩ P-CH -40V -6.6A -19A 28.3mΩ 41.3mΩ Equivalent Circuit MTB025C04H8 Outline Pin 1 DFN5×6 G：Gate S：Source D：Drain Ordering Information Device MTB025C04H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lea.

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Datasheet Details

Part number MTB025C04H8
Manufacturer Cystech Electonics
File Size 541.07 KB
Description N- AND P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB025C04H8 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTB025C04H8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 40V 7.3A 21A 18.3mΩ 26.6mΩ P-CH -40V -6.6A -19A 28.3mΩ 41.
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