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MTB080C10Q8 - N- and P-channel enhancement mode power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080C10Q8 Outline SOP-8 D2 D2 D1 D1 G:Gate S:Source D:Drain Pin 1 G2 S2 G1 S1 Ordering Information Device MTB080C10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p.

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Datasheet Details

Part number MTB080C10Q8
Manufacturer Cystech Electonics
File Size 410.13 KB
Description N- and P-channel enhancement mode power MOSFET
Datasheet download datasheet MTB080C10Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 1/12 N- and P-channel enhancement mode power MOSFET MTB080C10Q8 BVDSS ID@VGS=10V(-10V), TA=25°C RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 100V 2.9A 74mΩ 90mΩ P-CH -100V -1.