Datasheet4U Logo Datasheet4U.com

MTB25N03KN3 - N-Channel Enhancement Mode MOSFET

Features

  • Lower gate charge.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.7mΩ Equivalent Circuit MTB25N03KN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTB25N03KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment frie.

📥 Download Datasheet

Datasheet Details

Part number MTB25N03KN3
Manufacturer Cystech Electonics
File Size 411.88 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB25N03KN3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB201209B070 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B102 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B121 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B221 Multilayer Ferrite Chip Beads MAGNETIC
MTB201209B301 Multilayer Ferrite Chip Beads MAGNETIC

Other Datasheets by Cystech Electonics

Part Number Description
MTB20A03KQ8 Dual N-Channel Enhancement Mode Power MOSFET
MTB20A03Q8 Dual N-Channel Enhancement Mode Power MOSFET
MTB20A04DH8 Dual N-Channel Enhancement Mode Power MOSFET
MTB20A04Q8 Dual N-Channel Enhancement Mode Power MOSFET
MTB20A06KQ8 Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C122N3 Issued Date : 2015.09.08 Revised Date : Page No. : 1/9 30V N-Channel Enhancement Mode MOSFET MTB25N03KN3 Features • Lower gate charge • ESD protected gate • Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.
Published: |