Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C870H8 Issued Date : 2016.05.06 Revised Date : Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTDA0A10DH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
- Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A
- Simple Drive Requirement
RDS(ON)@VGS=5V, ID=2A
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
100V 10A 6.3A 3A 2.4A 70mΩ(typ) 82mΩ(typ)
Equivalent Circuit
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device MTDA0A10DH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
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