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MTDA0A10DH8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A.
  • Simple Drive Requirement RDS(ON)@VGS=5V, ID=2A.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 100V 10A 6.3A 3A 2.4A 70mΩ(typ) 82mΩ(typ) Equivalent Circuit MTDA0A10DH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTDA0A10DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shippi.

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Datasheet Details

Part number MTDA0A10DH8
Manufacturer Cystech Electonics
File Size 512.91 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDA0A10DH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C870H8 Issued Date : 2016.05.06 Revised Date : Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET MTDA0A10DH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A • Simple Drive Requirement RDS(ON)@VGS=5V, ID=2A • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 100V 10A 6.3A 3A 2.