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MTDA0P10FP - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package RDSON(MAX) 120mΩ Equivalent Circuit MTDA0P10FP Outline TO-220FP G:Gate D:Drain S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
  • 1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-15A, RG=25Ω Repetitive Avalanche Ener.

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Datasheet Details

Part number MTDA0P10FP
Manufacturer Cystech Electonics
File Size 251.43 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDA0P10FP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C733FP Issued Date : 2011.03.14 Revised Date : Page No. : 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET MTDA0P10FP BVDSS -100V ID -22A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package RDSON(MAX) 120mΩ Equivalent Circuit MTDA0P10FP Outline TO-220FP G:Gate D:Drain S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-15A, RG=25Ω Repetitive Avalanche Energy @ L=0.