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MTDA0A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free lead plating & Halogen-free package RDSON@VGS=5V, ID=2A 100V 2.9A 2.3A 70mΩ(typ) 82mΩ(typ) Equivalent Circuit MTDA0A10Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 G2 S2 G1 S1 Ordering Information Device MTDA0A10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment.

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Datasheet Details

Part number MTDA0A10Q8
Manufacturer Cystech Electonics
File Size 400.42 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDA0A10Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C870Q8 Issued Date : 2016.08.16 Revised Date : 2016.09.22 Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTDA0A10Q8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package RDSON@VGS=5V, ID=2A 100V 2.9A 2.