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MTDA0N10L3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTDA0N10L3 Outline SOT-223 D G:Gate D:Drain S:Source S D G Ordering Information Device MTDA0N10L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products P.

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Datasheet Details

Part number MTDA0N10L3
Manufacturer Cystech Electonics
File Size 309.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDA0N10L3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTDA0N10L3 BVDSS ID RDSON@VGS=10V, ID=3A RDSON@VGS=5V, ID=2A Description 100V 3.9A 77mΩ(typ) 87mΩ(typ) The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.