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MTDA0N10AV8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package 100V 8.5A 3.5A 74mΩ 84mΩ Equivalent Circuit MTDA0N10AV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTDA0N10AV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gre.

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Datasheet Details

Part number MTDA0N10AV8
Manufacturer Cystech Electonics
File Size 357.11 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDA0N10AV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C870V8 Issued Date : 2015.12.22 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTDA0N10AV8 BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=5V, ID=3A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package 100V 8.5A 3.