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CYStech Electronics Corp.
Spec. No. : C786J3 Issued Date : 2010.12.20 Revised Date : Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTDA4N20J3
BVDSS ID
200V 15A
RDSON(MAX)
140mΩ
Features
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
Equivalent Circuit
MTDA4N20J3
Outline
TO-252
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=11A, RG=25Ω Repetitive Avalanche Energy @ L=0.5mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
MTDA4N20J3 Datasheet
