Part ZXTP2013Z
Description 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR
Category Transistor
Manufacturer Diodes Incorporated
Size 490.59 KB
Diodes Incorporated
ZXTP2013Z

Overview

  • BVCEO > -100V
  • IC = -3.5A High Continuous Current
  • RSAT = 57mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(SAT) < -85mV @ IC = -1A
  • hFE Specified Up to -10A for High Current Gain Hold Up
  • Complementary NPN Type: ZXTN2011Z
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. Mechanical Data
  • Case: SOT89