• Part: 1SS226
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: EIC Semiconductor
  • Size: 261.09 KB
Download 1SS226 Datasheet PDF
1SS226 page 2
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Datasheet Summary

.eicsemi. PRV : 85 Volts Io : 100 mA Features : - Small package - Low forward voltage - Fast reverse recovery time - Small total capacitance - Ultra high speed switching application - Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 1.40 0.95 0.50 0.35 0.19 0.08 0.100 0.013 3.10 2.70 1.65 1.20 3.0 2.2 MECHANICAL DATA : - Case : SOT-23 plastic Case - Marking Code : A7 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage...