1SS388 - SILICON EPITAXIAL SCHOTTKY BARRER DIODE

EIC

Key Features

:.
Small package.
Low forward voltage.
Low revese current.
Pb / RoHS Free.

1SS388 silicon epitaxial schottky barrer diode by EIC - Datasheet Preview

Datasheet Details

Part number	1SS388
Manufacturer	EIC
File Size	85.66 KB
Description	SILICON EPITAXIAL SCHOTTKY BARRER DIODE
Datasheet	1SS388 Datasheet

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Other Datasheets by EIC

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1SS106	SCHOTTKY BARRIER DIODES
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °C Absolute Maximum Ratings (Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (Ta = 25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Symbol VF IR CT Certificate : TH97/10561QM Certificate : TW00/17276EM SILICON EPITAXIAL SCHOTTKY BARRER DIODE SOD-523 1.25 1.15 0.8 0.70 5 0.60 0.7 0.4 0.135 0.3 0.127 1.65 1.