EIC Semiconductor 1SS388
SILICON EPITAXIAL SCHOTTKY BARRER DIODE
| Part No. | 1SS388 |
|---|---|
| Datasheet | 1SS388 Download |
| Manufacturer |  EIC Semiconductor |
| Description | SILICON EPITAXIAL SCHOTTKY BARRER DIODE |
| Buy | Stock & Price |
FEATURES
: * Small package * Low forward voltage * Low revese current * Pb / RoHS FreeMECHANICAL DATA
: * Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °CABSOLUTE MAXIMUM RATINGS
(Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature RangeELECTRICAL CHARACTERISTICS
(Ta = 25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Symbol VF IR CT Certificate : TH97/10561QM Certificate : TW00/17276EM SILICON EPITAXIAL SCHOTTKY BARRER DIODE SOD-523 1.25 1.15 0.8 0.70 5 0.60 0.7 0.4 0.135 0.3 0.127 1.65 1.55 Dimensions in millimeters Symbol VRM VR IF IFM IFSM Ptot TJ TSTG Value 45 40 100 300 1.0 150 125 -55 to + 125 Unit V V mA mA A mW °C °C Test Condition IF = 50 mA VR = 10 V f = 1MHz Max. 0.6 5 25 Unit V μA pF Page 1 of 2 Rev. 00 : May 7, 2007 POWER DISSIPATION, (mW) Certificate : TH97/10561QM Certificate : TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1SS388 ) FIG.1 - POWER DISSIPATION VS.