EPC EPC2019
Power Transistor
| Part No. | EPC2019 |
|---|---|
| Datasheet | EPC2019 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 200 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 240 V ID Continuous (TA = 25˚C, RθJA = 18°C/W) Pulsed (25°C, TPULSE = 300 µs) 8.5 A 45 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 2.7 RθJB Thermal Resistance, Junction-to-Board 7.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 72 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS Drain-to-Source Voltage Drain-Source Leakage VGS = 0 V, ID = 125 μA VGS = 0 V, VDS = 160 V Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage VGS = 5 V VGS = -4 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 1.5 mA RDS(on) Drain-Source On Resistance VSD Source-Drain Forward Voltage# # Defined by design.
