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M12L128168A-5TIG2S Datasheet

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)
M12L128168A-5TIG2S datasheet preview

Datasheet Details

Part number M12L128168A-5TIG2S
Datasheet M12L128168A-5TIG2S-ESMT.pdf
File Size 1.17 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TIG2S page 2 M12L128168A-5TIG2S page 3

M12L128168A-5TIG2S Overview

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance...

M12L128168A-5TIG2S Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS Latency ( 2 & 3 )
  • Burst Length ( 1, 2, 4, 8 & full page )
  • Burst Type ( Sequential & Interleave )
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read single write operation
  • DQM for masking
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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M12L128168A-5TG 2M x 16 Bit x 4 Banks Synchronous DRAM
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M12L128168A-5TG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TVAG2N Synchronous DRAM
M12L128168A-5TVAG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TVG2N Synchronous DRAM
M12L128168A-5TVG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM

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