• Part: M12L128168A-5TIG2S
  • Description: 2M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.17 MB
Download M12L128168A-5TIG2S Datasheet PDF
Elite Semiconductor Microelectronics Technology
M12L128168A-5TIG2S
FEATURES - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) - All inputs are sampled at the positive going edge of the system clock - Burst Read single write operation - DQM for masking - Auto & self refresh - 64ms refresh period (4K cycle) M12L128168A (2S) Operation Temperature Condition -40°C~85°C 2M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L128168A-5TIG2S M12L128168A-5BIG2S M12L128168A-6TIG2S M12L128168A-6BIG2S M12L128168A-7TIG2S M12L128168A-7BIG2S Max Freq. Package ments 200MHz 54 Pin TSOPII Pb-free 200MHz 54 Ball FBGA Pb-free 166MHz 54 Pin TSOPII Pb-free 166MHz 54 Ball FBGA Pb-free 143MHz 54 Pin TSOPII Pb-free 143MHz 54 Ball FBGA Pb-free GENERAL DESCRIPTION The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x...