M12L128168A-5TVAG2S Datasheet 2m X 16 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	M12L128168A-5TVAG2S
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	1.02 MB
Description	2M x 16 Bit x 4 Banks Synchronous DRAM
Datasheet	M12L128168A-5TVAG2S M12L128168A-5TVG2S Datasheet (PDF)

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable la

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ).
All inputs are sampled at the positive going edge of the system clock.
Burst Read single write operation.
DQM for masking.
Auto & self refresh (self refresh is not supported for VA grade).
Refresh - 64 ms refres.

Part Number	Description
M12L128168A-5TVAG2N	Synchronous DRAM
M12L128168A-5TVG2N	Synchronous DRAM
M12L128168A-5TVG2S	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TG	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TG2N	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TG2S	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2S	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVAG2N	Synchronous DRAM