M12L128168A-5TVAG2N
M12L128168A-5TVAG2N is Synchronous DRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M12L128168A-5TVG2N comparator family.
- Part of the M12L128168A-5TVG2N comparator family.
ESMT
SDRAM
Features
- JEDEC standard 3.3V power supply
- LVTTL patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
- All inputs are sampled at the positive going edge of the system clock
- Burst Read single write operation
- DQM for masking
- Auto & self refresh (self refresh is not supported for VA grade)
- Refresh
- 64ms refresh period (4K cycle) for V grade
- 16ms refresh period (4K cycle) for VA grade
M12L128168A (2N)
Automotive Grade
2M x 16 Bit x 4 Banks
Synchronous DRAM
GENERAL DESCRIPTION
The M12L128168A is 134,217,728 bits...
