M13D64322A
M13D64322A is 512K x 32 Bit x 4 Banks LPDDR SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
Features
JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized. Differential clock inputs (CLK and CLK ) Four bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8, 16 & full page Special function support
- DS (Drive Strength)
- Deep Power Down Mode (DPD Mode)
M13D64322A (2S)
512K x 32 Bit x 4 Banks
Low Power DDR SDRAM
All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE Data mask (DM) for write masking only VDD = 1.7V ~ 1.95V VDDQ = 1.7V ~ 1.95V Auto & Self refresh 15.6us refresh interval (64ms refresh period, 4K cycle) LVCMOS-patible inputs
Ordering Information
Product ID M13D64322A -4BG2S M13D64322A -4.5BG2S M13D64322A -5BG2S
Max Freq. 250MHz 222MHz 200MHz
Package ments
1.8V 144 ball FBGA...
