M52D2561616A Datasheet | Elite Semiconductor Microelectronics Technology

FEATURES - 1.8V power supply - LVCMOS patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) - EMRS cycle with address - All inputs are sampled at the positive going edge of the system clock - Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature pensated Self Refresh) - DS (Driver Strength) - DQM for masking - Auto & self refresh - 64ms refresh period (8K cycle) M52D2561616A (2F) 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq. Package ments M52D2561616A-5BG2F 200MHz 54 Ball FBGA Pb-free M52D2561616A-6BG2F 166MHz 54 Ball FBGA Pb-free M52D2561616A-7BG2F 143MHz 54 Ball FBGA Pb-free GENERAL DESCRIPTION The M52D2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous...