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M52D2561616A - Mobile Synchronous DRAM

Description

The M52D2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

Features

  • 1.8V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address.
  • All inputs are sampled at the positive going edge of the system clock.
  • Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength).
  • DQM for maski.

📥 Download Datasheet

Datasheet Details

Part number M52D2561616A
Manufacturer ESMT
File Size 780.05 KB
Description Mobile Synchronous DRAM
Datasheet download datasheet M52D2561616A Datasheet

Full PDF Text Transcription

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ESMT Mobile SDRAM FEATURES  1.8V power supply  LVCMOS compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  EMRS cycle with address  All inputs are sampled at the positive going edge of the system clock  Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength)  DQM for masking  Auto & self refresh  64ms refresh period (8K cycle) M52D2561616A (2F) 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq.
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