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M53D2561616A-6BG2F - 4M x16 Bit x 4 Banks Mobile DDR SDRAM

Download the M53D2561616A-6BG2F datasheet PDF. This datasheet also covers the M53D2561616A variant, as both devices belong to the same 4m x16 bit x 4 banks mobile ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Ball Name Function A0~A12, BA0~BA1 Address inputs - Row address A0~A12 - Column address A0~ A8 A10/AP : AUTO Precharge BA0~BA1 : Bank selects (4 Banks) DQ0~DQ15 Data-in/Data-out RAS CAS WE VSS VDD LDQS, UDQS Row address strobe Column address strobe Write enable Ground Power Bi-directional Dat

Key Features

  • JEDEC Standard.
  • Internal pipelined double-data-rate architecture, two data access per clock cycle.
  • Bi-directional data strobe (DQS).
  • No DLL; CLK to DQS is not synchronized.
  • Differential clock inputs (CLK and CLK ).
  • Four bank operation.
  • CAS Latency : 3.
  • Burst Type : Sequential and Interleave.
  • Burst Length : 2, 4, 8, 16.
  • Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Drive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M53D2561616A-ESMT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M53D2561616A-5BG2F 4M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D2561616A-7.5BG2F 4M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D2561616A 4M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D256328A 2M x 32 Bit x 4 Banks LPDDR SDRAM
M53D256328A-5BIG2F 2M x 32 Bit x 4 Banks LPDDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Mobile DDR SDRAM Features  JEDEC Standard  Internal pipelined double-data-rate architecture, two data access per clock cycle  Bi-directional data strobe (DQS)  No DLL; CLK to DQS is not synchronized.  Differential clock inputs (CLK and CLK )  Four bank operation  CAS Latency : 3  Burst Type : Sequential and Interleave  Burst Length : 2, 4, 8, 16  Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) M53D2561616A (2F) 4M x16 Bit x 4 Banks Mobile DDR SDRAM  All inputs except data & DM are sampled at the rising edge of the system clock(CLK)  DQS is edge-aligned with data for READ; center-aligned with data for WRITE  Data mask (DM) for write masking only  VDD/VDDQ = 1.7V ~ 1.