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M53D256328A - LPDDR SDRAM

Description

Ball Name Function A0~A11, BA0~BA1 Address inputs - Row address A0~A11 - Column address A0~A8 A10/AP : AUTO Precharge BA0~BA1: Bank selects (4 Banks) DQ0~DQ31 Data-in/Data-out RAS CAS WE VSS VDD DQS0~DQS3 Row address strobe Column address strobe Write enable Ground Power Bi-directional Data S

Features

  • JEDEC Standard.
  • Internal pipelined double-data-rate architecture, two data access per clock cycle.
  • Bi-directional data strobe (DQS).
  • No DLL; CLK to DQS is not synchronized.
  • Differential clock inputs (CLK and CLK ).
  • Four bank operation.
  • CAS Latency : 3.
  • Burst Type : Sequential and Interleave.
  • Burst Length : 2, 4, 8, 16.
  • Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Drive.

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Datasheet Details

Part number M53D256328A
Manufacturer ESMT
File Size 2.26 MB
Description LPDDR SDRAM
Datasheet download datasheet M53D256328A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT LPDDR SDRAM Features  JEDEC Standard  Internal pipelined double-data-rate architecture, two data access per clock cycle  Bi-directional data strobe (DQS)  No DLL; CLK to DQS is not synchronized.
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