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AO4828 - Dual N-Channel MOSFET

General Description

The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 60V ID = 6.5 A RDS(ON) < 36mΩ @ VGS=10 V RDS(ON) < 47mΩ @ VGS=4.5V.

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Datasheet Details

Part number AO4828
Manufacturer EVVOSEMI
File Size 1.31 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4828 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4828 Description The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID = 6.5 A RDS(ON) < 36mΩ @ VGS=10 V RDS(ON) < 47mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power supply Dual N-Channel MOSFET D1 D2 G1 S1 G2 S2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.