AO4828 Datasheet | EVVO

Description The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID = 6.5 A RDS(ON) < 36mΩ @ VGS=10 V RDS(ON) < 47mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power supply Dual N-Channel MOSFET D1 D2 G1 S1 G2 S2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 +20 6.5 5 30 2.1 -55 to 150 -55 to 150 Rthj-a Maximum Thermal Resistance, Junction- 60 ambient3 Units V V A A A W ℃ ℃ ℃/W Dual N-Channel MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance g FS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss...