AO4828 Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Max Operating Temp: 150 °C
Description
SOP-8 GATE SOURCE DRAIN 8765 D1 D2 D2 D2 D1 D1 S2 G2 S1 G1 1234 G1 S1 N-Channel G2 S2 N-Channel Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (VGS=4.5V 3) Pulsed Drain Current 1 Total Power Dissipation Storage Temperature Range Temperature Range Maximum TA=25°C TA=70°C TA=25°C Symbol VDS VGS ID IDM PD TSTG TJ RthJA Rating 60 ±20 6.5 5 30 2.1 -55 to 150 -55 to 150 60 Units V A W °C °C °C/W UTD Semiconductor Co.,Limited Nov.2024 1 of 9 UMW AO4828 Dual 60V N-ChanneI MOSFET Characteristic (TC=25°C unless otherwise noted) Parameter Off Characteristics Drain-source breakdown voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Conditions Min Typ Max Units BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=60V, VGS=0V VGS=±20V, VDS=0V 60 69 V 1 µA ±100 nA VGS(th) RDS(ON) gFS VDS=VGS, ID=250µA VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=5V, ID=6A 1 1.5 2.5 V 30 36 mΩ 36 47 mΩ 20 S Ciss 1920 pF Coss VDS=25V, VGS=0V, f=1MHz 155 pF Crss 116 pF tD(on) 8 ns t.
