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M24L216128DA - 2-Mbit (128K x 16) Pseudo Static RAM

General Description

The M24L216128DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface.

Key Features

  • ‧Advanced low-power architecture.
  • High speed: 55 ns, 70 ns.
  • Wide voltage range: 2.7V to 3.6V.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Low standby power.
  • Automatic power-down when deselected www. DataSheet4U. com M24L216128DA 2-Mbit (128K x 16) Pseudo Static RAM Functional.

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Datasheet Details

Part number M24L216128DA
Manufacturer Elite Semiconductor Memory Technology
File Size 378.64 KB
Description 2-Mbit (128K x 16) Pseudo Static RAM
Datasheet download datasheet M24L216128DA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected www.DataSheet4U.com M24L216128DA 2-Mbit (128K x 16) Pseudo Static RAM Functional Description The M24L216128DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for portable applications such as cellular telephones. The device can be put into standby mode, reducing power consumption dramatically when deselected ( CE1 HIGH, CE2 LOW or both BHE and BLE are HIGH).