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M24L216128SA - 2-Mbit (128K x 16) Pseudo Static RAM

General Description

of read and write modes.

The M24L216128SA is a high-performance CMOS Pseudo Static RAM organized as 128K words by 16 bits that supports an asynchronous memory interface.

Key Features

  • Wide voltage range: 2.7V.
  • 3.6V.
  • Access Time: 55 ns, 70 ns.
  • Ultra-low active power.
  • Typical active current: 1mA @ f = 1 MHz.
  • Typical active current: 14 mA @ f = fmax (For 55-ns).
  • Typical active current: 8 mA @ f = fmax (For 70-ns).
  • Ultra low standby power.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power www. DataSheet4U. com M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM when both Byte Hi.

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Datasheet Details

Part number M24L216128SA
Manufacturer Elite Semiconductor Memory Technology
File Size 373.28 KB
Description 2-Mbit (128K x 16) Pseudo Static RAM
Datasheet download datasheet M24L216128SA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power www.DataSheet4U.com M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM when both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). Writing to the device is accomplished by asserting Chip Enable ( CE LOW) and Write Enable ( WE ) input LOW.