M24L216128SA Datasheet | Elite Semiconductor Memory Technology

ESMT PSRAM Features - Wide voltage range: 2.7V- 3.6V - Access Time: 55 ns, 70 ns - Ultra-low active power - Typical active current: 1mA @ f = 1 MHz - Typical active current: 14 mA @ f = fmax (For 55-ns) - Typical active current: 8 mA @ f = fmax (For 70-ns) - Ultra low standby power - Automatic power-down when deselected - CMOS for optimum speed/power .. M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM when both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). Writing to the device is acplished by asserting Chip Enable ( CE LOW) and Write Enable ( WE ) input LOW. If Byte Low Enable ( BLE ) is LOW,...