The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
ESMT
PSRAM
Features
• Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power
www.DataSheet4U.com
M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM
when both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). Writing to the device is accomplished by asserting Chip Enable ( CE LOW) and Write Enable ( WE ) input LOW.