M24L28256SA Datasheet | Elite Semiconductor Memory Technology

ESMT PSRAM Features - Advanced low-power architecture - High speed: 55 ns, 70 ns - Wide voltage range: 2.7V to 3.6V - Typical active current: 1 mA @ f = 1 MHz - Low standby power - Automatic power-down when deselected .. M24L28256SA 2-Mbit (256K x 8) Pseudo Static RAM the device is acplished by asserting Chip Enable ( CE ) and Write Enable ( WE ) inputs LOW .Data on the eight I/O pins(I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17). Reading from the device is acplished by asserting the Chip Enable One ( CE ) and Output Enable ( OE ) inputs LOW while forcing Write Enable ( WE ) HIGH. Under these conditions, the contents...