M24L28256DA Datasheet | Elite Semiconductor Memory Technology

ESMT PSRAM Features - Advanced low-power architecture - High speed: 55 ns, 70 ns - Wide voltage range: 2.7V to 3.3V - Typical active current: 1 mA @ f = 1 MHz - Low standby power - Automatic power-down when deselected .. M24L28256DA 2-Mbit (256K x 8) Pseudo Static RAM Enable ( WE ) inputs LOW and Chip Enable Two ( CE 2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17). Reading from the device is acplished by asserting the Chip Enable One ( CE 1) and Output Enable ( OE ) inputs LOW while forcing Write Enable ( WE ) HIGH. And Chip Enable Two ( CE 2) HIGH. Under these conditions, the...