Datasheet Summary
PRELIMINARY DATA SHEET
128M bits DDR Mobile RAM
WTR (Wide Temperature Range) EDD12322GBH-TS (4M words × 32 bits)
Specifications
- Density: 128M bits
- Organization × 32 bits: 1M words × 32 bits × 4 banks
- Package: 90-ball FBGA Lead-free (RoHS pliant) and Halogen-free
- Power supply: VDD, VDDQ = 1.7V to 1.95V
- Data rate: 333Mbps/266Mbps (max.)
- 1KB page size Row address: A0 to A11 Column address: A0 to A7
- Four internal banks for concurrent operation
- Interface: LVCMOS
- Burst lengths (BL): 2, 4, 8, 16
- Burst type (BT): Sequential (2, 4, 8, 16) Interleave (2, 4, 8, 16)
- /CAS Latency (CL): 3
- Precharge: auto precharge option for each burst access
- Driver strength:...