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DATA SHEET
128M bits DDR SDRAM
EDD1232ABBH (4M words × 32 bits)
Specifications
• Density: 128M bits • Organization ⎯ 1M words × 32 bits × 4 banks • Package: 144-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.125V • Data rate: 400Mbps (max.) • Four internal banks for concurrent operation • Interface: SSTL_2 • Burst lengths (BL): 2, 4, 8 • Burst type (BT): ⎯ Sequential (2, 4, 8) ⎯ Interleave (2, 4, 8) • /CAS Latency (CL): 3 • Precharge: auto precharge operation for each burst
access • Driver strength: weak/matched • Refresh: auto-refresh, self-refresh
• Refresh cycles: 4096 cycles/32ms
⎯ Average refresh period: 7.