EDD5116ADTA-E Overview
The EDD5104AD, the EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 2 bits prefetchpipelined architecture.
EDD5116ADTA-E Key Features
- Power supply: VDD, VDDQ = 2.5V ± 0.2V
- Data Rate: 333Mbps/266Mbps (max.)
- Double Data Rate architecture; two data transfers per clock cycle
- Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver
- Data inputs, outputs, and DM are synchronized with DQS
- 4 internal banks for concurrent operation
- DQS is edge aligned with data for READs; center aligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS