• Part: EDD5116AFTA
  • Manufacturer: Elpida Memory
  • Size: 620.83 KB
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EDD5116AFTA Description

Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design.

EDD5116AFTA Key Features

  • Power supply: VDD, VDDQ = 2.5V ± 0.2V
  • Data Rate: 333Mbps/266Mbps (max.)
  • Double Data Rate architecture; two data transfers per clock cycle
  • Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver
  • Data inputs, outputs, and DM are synchronized with DQS
  • 4 internal banks for concurrent operation
  • DQS is edge aligned with data for READs; center aligned with data for WRITEs
  • Differential clock inputs (CK and /CK)
  • DLL aligns DQ and DQS transitions with CK transitions
  • mands entered on each positive CK edge; data and data mask referenced to both edges of DQS