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EDD5116AGTA-4 - 512M bits DDR SDRAM

Download the EDD5116AGTA-4 datasheet PDF. This datasheet also covers the EDD5108AGTA-4 variant, as both devices belong to the same 512m bits ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 2 bits prefetch pipelined architecture.
  • Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver.
  • Data inputs, outputs, and DM are synchronized with DQS.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDD5108AGTA-4_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EDD5116AGTA-4
Manufacturer Elpida Memory
File Size 561.99 KB
Description 512M bits DDR SDRAM
Datasheet download datasheet EDD5116AGTA-4 Datasheet

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Other Datasheets by Elpida Memory

Part Number Description
EDD5116AGTA-4 512M bits DDR SDRAM
EDD5116AGTA-LI 512M bits DDR SDRAM WTR
EDD5116AGTA 512M bits DDR SDRAM
EDD5116ADTA 512M bits DDR SDRAM
EDD5116ADTA-E 512M bits DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET 512M bits DDR SDRAM EDD5108AGTA-4 (64M words × 8 bits) EDD5116AGTA-4 (32M words × 16 bits) Specifications • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AGTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AGTA) • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.125V • Data rate: 500Mbps (max.) • Four internal banks for concurrent operation • Interface: SSTL_2 • Burst lengths (BL): 2, 4, 8 • Burst type (BT): ⎯ Sequential (2, 4, 8) ⎯ Interleave (2, 4, 8) • /CAS Latency (CL): 3 • Precharge: auto precharge option for each burst access • Driver strength: normal/weak • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms ⎯ Average refresh period: 7.