• Part: EM562161
  • Description: 128K x 16 Low Power SRAM
  • Manufacturer: Etron Technology
  • Size: 140.13 KB
Download EM562161 Datasheet PDF
Etron Technology
EM562161
EM562161 is 128K x 16 Low Power SRAM manufactured by Etron Technology.
Etron Tech Features - Single power supply voltage of 2.7V to 3.6V - Power down Features using CE1# and CE2 - Low operating current : 30m A(max for 55 ns) - Maximum Standby current : 10µA at 3.6 V - Data retention supply voltage: 1.5V to 3.6V - Direct TTL patibility for all input and output - Wide operating temperature range: -40°C to 85°C - Package type: 48-ball TFBGA, 6x8mm 128K x 16 Low Power SRAM Preliminary, Rev 1.0 07/2001 circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40°C to 85°C, the EM562161 can be used in environments exhibiting extreme temperature conditions. Ordering Information Part Number EM562161BC-55 EM562161BC-70 Speed 55 ns 70 ns IDDS2 10 µA 10 µA Package 6x8 BGA 6x8 BGA Pin Configuration 48-Ball BGA (CSP), Top View 1 2 3 4 5 6 Pin Description Symbol A0 - A16 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD...