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EM565168 - 512K x 16 Pseudo SRAM

Description

Symbol A0 A18 DQ0 DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground E VCC DQ14 DQ12 DQ13 NC A14 A16 A15 DQ4 DQ5 VSS DQ6 F G H

Features

  • Organized as 512K words by 16 bits.
  • Fast Cycle Time : 55ns, 70ns.
  • Standby Current : 100uA.
  • Deep power-down Current : 10uA (Memory cell data invalid).
  • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15).
  • Compatible with low power SRAM.
  • Single Power Supply Voltage : 3.0V±0.3V.
  • Package Type : 48-ball FBGA, 6x8mm.
  • Lead Free Package available - EM565168BC-XXG, (G : indicates Lead Free Package) EM565168 512K x 16 Pseudo SRA.

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Datasheet preview – EM565168

Datasheet Details

Part number EM565168
Manufacturer Etron Technology
File Size 124.54 KB
Description 512K x 16 Pseudo SRAM
Datasheet download datasheet EM565168 Datasheet
Additional preview pages of the EM565168 datasheet.

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Full PDF Text Transcription

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EtronTech Rev 1.0 Features • Organized as 512K words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA •Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM • Single Power Supply Voltage : 3.0V±0.3V • Package Type : 48-ball FBGA, 6x8mm • Lead Free Package available - EM565168BC-XXG, (G : indicates Lead Free Package) EM565168 512K x 16 Pseudo SRAM Sep.
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