FLK207MH-14 Datasheet | Eudyna Devices

FEATURES - .. High Output Power: P1d B = 32.5d Bm(Typ.) - High Gain: G1d B = 6.0d B(Typ.) - High PAE: ηadd = 27%(Typ.) - Proven Reliability - Hermetic Metal/Ceramic Package DESCRIPTION The FLK207MH-14 is a power Ga As FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 12.5 -65 to +175 175 Unit V V W °C °C Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.0 m A respectively with gate resistance of 250Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: MH Symbol IDSS gm Vp VGSO P1d B G1d B ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 500m A VDS = 5V, IDS = 40m A IGS = -40µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz Channel to Case Min. -1.0 -5 31.5 5.0 Limit Typ. Max. 800 400 -2.0 32.5 6.0 27 10 1200 -3.5 12 Unit m A m S V V d Bm d B % °C/W G.C.P.: Gain pression Point Edition 1.1 August 1999 X, Ku Band Power Ga As FET .. POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 1000 800 Drain Current (m A) 600 400 200 VGS =0V -0.5V -1.0V -1.5V -2.0V Total Power Dissipation (W) 16 12 8 4 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT...