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FLK207XV - GaAs FET & HEMT Chips

General Description

The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Key Features

  • www. DataSheet4U. com High Output Power: P1dB = 32.5dBm(Typ. ).
  • High Gain: G1dB = 6.0dB(Typ. ).
  • High PAE: ηadd = 27%(Typ. ).
  • Proven Reliability Drain Drain Drain Drain.

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Datasheet Details

Part number FLK207XV
Manufacturer Eudyna Devices
File Size 101.49 KB
Description GaAs FET & HEMT Chips
Datasheet download datasheet FLK207XV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27%(Typ.) • Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25°C 12.