FLM0910-15F Datasheet | Eudyna Devices

FEATURES High Output Power: P1d B=42.0d Bm(Typ.) High Gain: G1d B=7.5d B(Typ.) High PAE: ηadd=32%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package X-Band Internally Matched FET DESCRIPTION The FLM0910-15F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Ite m Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage V GS -5 Total Pow e r Dissipation Storage Temperature Tstg -65 to +175 o C Channel Temperature Tch 175 o C REMENDED OPERATING CONDITION (Case Temperature Tc=25o C) Ite m DC Input Voltage Forw ard Gate Current Reverse Gate Current Symbol VDS IGF IGR Condition RG=50 ohm RG=50 ohm Lim it Unit 16.7 m A -3.62 m A ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Lim it Ite m Symbol Condition Unit...