FLM0910-3F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B = 35.0d Bm (Typ.) - High Gain: G1d B = 7.5d B (Typ.) - High PAE: ηadd = 29% (Typ.) - Low IM3 = -46d Bc@Po = 24.0d Bm - Broad Band: 9.5 ~ 10.5GHz - Impedance Matched Zin/Zout = 50Ω X, Ku-Band Internally Matched FET DESCRIPTION The FLM0910-3F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage Gate-Source Voltage VDS VGS -5 Total Power Dissipation Tc = 25°C Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch °C Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 m A respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1d B...