FLM0910-25F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B=44d Bm(Typ.) - High Gain: G1d B=7.0d B(Typ.) - High PAE: ηadd=30%(Typ.) - Broad Band: 9.5～10.5GHz - Impedance Matched Zin/Zout = 50Ω - Hermetically Sealed Package X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Rating Unit -5 Total Power Dissipation Storage Temperature Tstg -65 to +175 ℃ Channel Temperature Tch ℃ Remended Operating Condition(Case Temperature Tc=25℃) Item Symbol Condition Limit DC Input Voltage ≦10 Forward Gate Current RG=25Ω ≦64...