FLM5053-35F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B=45.5d Bm(Typ.) - High Gain: G1d B=8.0d B(Typ.) - High PAE: ηadd=35%(Typ.) - Broad Band: 5.0～5.3GHz - Impedance Matched Zin/Zout = 50Ω - Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM5053-35F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Ca se Te mpe ra ture Tc=25o C) Ite m Sy mbol Rating Unit Drain-Source V oltage Gate -Source V oltage V GS -5 Total Pow e r Dis s ipation Storage Te m pe rature Tstg -65 to +175 o C Channe l Tem perature Tch 175 o C REMENDED OPERATING CONDITION (Ca se Te mpe ra ture Tc=25o C) Ite m DC Input V oltage Forw ard Gate Curre nt Re ve rs e Gate Curre nt Storage Te m pe rature Sym bol VDS IGF IGR Tstg Condition RG=25 ohm RG=25 ohm -55 to +125 Lim it ≦10 ≦52.0 ≧-23.2 Unit V m A m A o C ELECTRICAL CHARACTERISTICS (Ca se Te mpe ra ture Tc=25o C) Ite m Sym...