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FLM1314-3F - X / Ku-Band Internally Matched FET

Description

The FLM1314-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 35.0dBm (Typ. ) High Gain: G1dB = 5.5dB (Typ. ) High PAE: ηadd = 25% (Typ. ) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω.

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Datasheet preview – FLM1314-3F

Datasheet Details

Part number FLM1314-3F
Manufacturer Eudyna
File Size 304.04 KB
Description X / Ku-Band Internally Matched FET
Datasheet download datasheet FLM1314-3F Datasheet
Additional preview pages of the FLM1314-3F datasheet.

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Full PDF Text Transcription

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FLM1314-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM1314-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.
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