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FLM1314-6F - X / Ku-Band Internally Matched FET

General Description

The FLM1314-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 37.5dBm (Typ. ) High Gain: G1dB = 5.5dB (Typ. ) High PAE: ηadd = 22% (Typ. ) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed.

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Datasheet Details

Part number FLM1314-6F
Manufacturer Eudyna
File Size 295.88 KB
Description X / Ku-Band Internally Matched FET
Datasheet download datasheet FLM1314-6F Datasheet

Full PDF Text Transcription for FLM1314-6F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM1314-6F. For precise diagrams, and layout, please refer to the original PDF.

FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broa...

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(Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1314-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating

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