Full PDF Text Transcription for FLM1314-8F (Reference)
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FLM1314-8F. For precise diagrams, and layout, please refer to the original PDF.
FLM1314-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low ...
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(Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM1314-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 45.5 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for th
FLM1314-8F Datasheet
