EIB3439-4P Datasheet | Excelics Semiconductor

FEATURES - - - - - - 3.40-3.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 12.0 d B Power Gain at 1d B pression 30% Power Added Efficiency Non-Hermetic Metal Flange Package .827 .669 .120 MIN Excelics EIC3439-4P .120 MIN .020 .400 YYWW .126 .508 .450 .052 .084 ALL DIMENSIONS IN INCHES .161 .004 .105 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G .. Caution! ESD sensitive device. MIN 35.5 11.0 TYP 36.5 12.0 ±0.6 30 1700 2800 -2.0 5.5 2000 3500 -3.5 6.0 o PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600m A Gain at 1d B pression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600m A Gain Flatness f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600m A Power Added Efficiency at 1d B pression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 3.40-3.90GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28 m A UNITS d Bm d B d B % m A m A V C/W Note: 1) Tested with 100 Ohm gate resistor. 2) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL VDS VGS IGSF IGSR PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 V -6.0 V 43.2 m A -7.2 m A 36.5 d Bm 175°C -65/+175°C 25 W CONTINUOUS2 8V -4.0 V 14.4 m A -2.4 m A @ 3d B pression 175°C -65/+175°C 25 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 1 Revised March...