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EIB3439-4P - 4W Internally Matched Power FET

Features

  • 3.40-3.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package .827 .669 .120 MIN Excelics EIC3439-4P .120 MIN .020 .400 YYWW SN SN .126 .508 .450 .052 .084 ALL.

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Datasheet Details

Part number EIB3439-4P
Manufacturer Excelics Semiconductor
File Size 108.75 KB
Description 4W Internally Matched Power FET
Datasheet download datasheet EIB3439-4P Datasheet
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EIB3439-4P UPDATED 03/02/2006 3.40-3.90 GHz 4W Internally Matched Power FET FEATURES • • • • • • 3.40-3.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package .827 .669 .120 MIN Excelics EIC3439-4P .120 MIN .020 .400 YYWW SN SN .126 .508 .450 .052 .084 ALL DIMENSIONS IN INCHES .161 .004 .105 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G www.DataSheet4U.com Caution! ESD sensitive device. MIN 35.5 11.0 TYP 36.5 12.0 ±0.6 30 1700 2800 -2.0 5.5 2000 3500 -3.5 6.0 o PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 3.40-3.90GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 3.40-3.
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