EIC0910A-8 Datasheet | Excelics Semiconductor

.. ISSUED DATE: 10/09/2007 9.20-10.00 GHz 8-Watt Internally Matched Power FET Features - - - - - - - - 9.20-10.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 d Bm Output Power at 1d B pression 7.5 d B Power Gain at 1d B pression 30% Power Added Efficiency -46 d Bc IM3 at PO = 28d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f = 9.20-10.0GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 10.0GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38.5 6.5 39.0 7.5 UNITS d Bm d B ±0.6 30 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o d B % 2600 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...