EIC1112-5 Datasheet | Excelics Semiconductor

FEATURES - - - - - - 11.7- 12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 d Bm Output Power at 1d B pression 6.5 d B Power Gain at 1d B pression 25% Power Added Efficiency Hermetic Metal Flange Package Excelics 0.060 MIN 0.022 0.319 DRAIN YYWW 2X 0.094 0.382 0.004 0.130 0.045 0.071±0.008 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 1600m A Gain at 1d B pression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 1600m A Gain Flatness f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 1600m A Power Added Efficiency at 1d B pression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 1600m A Drain Current at 1d B pression f = 11.7-12.7GHz -40 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=26.5 d Bm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 12.7GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 36.5 5.5 37.5 6.5 UNITS d Bm d B ±0.6 25 1700 -43 2800 -2.5 5.0 3500 -4.0 5.5 o d B % 2000 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 24 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 61.2m A -10.2m A 35.5d Bm o 175 C o -65 to +175 C CONTINUOUS2 10V -4V 20.4m A -3.4m A @ 3d B pression 175 o C -65 to +175 o C 27W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 27W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 2...