EIC1112-8 - Internally Matched Power FET

Features

11.7.
12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package Excelics EIC1112-8 0.060 MIN 0.022 0.319 DRAIN YYWW 2X 0.094 0.382 0.004 0.130 0.045 0.071±0.008 Caution! ESD sensitive device.

Excelics Semiconductor

Datasheet Details

Part number	EIC1112-8
Manufacturer	Excelics Semiconductor
File Size	113.99 KB
Description	Internally Matched Power FET
Datasheet	EIC1112-8 Datasheet
Additional preview pages of the EIC1112-8 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com EIC1112-8 ISSUED 07/03/2007 11.7-12.7 GHz 8-Watt Internally Matched Power FET 0.060 MIN 0.650±0.008 0.512 GATE FEATURES • • • • • • 11.7– 12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package Excelics EIC1112-8 0.060 MIN 0.022 0.319 DRAIN YYWW 2X 0.094 0.382 0.004 0.130 0.045 0.071±0.008 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 11.7-12.

Published: Aug 4, 2009 |