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EIC1314-12 - Internally Matched Power FET

Key Features

  • 13.75.
  • 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

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Datasheet Details

Part number EIC1314-12
Manufacturer Excelics Semiconductor
File Size 185.53 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1314-12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1314-12 ISSUED 10/17/2008 13.75-14.50 GHz 12-Watt Internally Matched Power FET Excelics EIC1314-12 .827±.010 .669 .120 MIN FEATURES • • • • • • • 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 4200mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 4200mA Gain Flatness f = 13.